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| PF0147 MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-322D (Z) 5th. Edition June, 1996 Application For GSM class4 890 to 915MHz. Features * * * * 2stage amplifier Small package: 0.6cc High efficiency: 40% Typ High speed switching: 0.9sec Typ Pin Arrangement * RF-H1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND 5 5 1 2 3 4 Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD IDD VAPC Pin Tc (op) Tstg Pout Rating 10 3 6 20 Unit V A V mW C C W -30 to +100 -30 to +100 7 PF0147 Internal Diagram G G G G: GND PIN1 Pin PIN2 VAPC G PIN3 VDD PIN4 Pout Electrical Characteristics (Tc = 25C) Item Frequency range Control voltage range Symbol f VAPC Min 890 0.5 Typ Max 915 3.5 100 Unit MHz V A % dBc dBc VDD = 10V, VAPC = 0V Pin = 10mW, VDD = 4.8V, Pout = 3.2W (at APC controlled), RL = Rg = 50, Tc = 25C Test Condition -- -- -- 40 Drain cutoff current IDS Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) T 2nd H.D. 3rd H.D. -- 35 -- -40 -40 3 -- -- -50 -50 2 3.8 VSWR (in) -- Pout (1) 3.2 -- W Pin = 10mW, VDD = 4.8V, VAPC = 3.5V, RL = Rg = 50, Tc = 25C Pin = 10mW, VDD = 4.3V, VAPC = 3.5V, RL = Rg = 50, Tc = 80C Pin = 10mW, VDD = 4.8V, VAPC = 0.5V, RL = Rg = 50, Tc = 25C Pin = 10mW, VDD = 4.8V, Pout = 3.2W, RL = Rg = 50, Tc = 25C Pin = 10mW, VDD = 6.0V, Pout 3.2W (at APC controlled), Rg = 50, t = 20sec., Tc = 25C, Output VSWR = 10 : 1 All phases -- Output power (2) Pout (2) 1.8 2.4 -- W Isolation -- -- -- -20 dBm Switching time tr, tf -- 0.9 2 s Stability -- No parasitic oscillation -- PF0147 Test System Diagram S.G Power Meter L.P.F 3dB ATT VAPC VDD Spectrum Analyzer TEST FIXTURE Directional Coupler Directional Coupler RF SW. Power Meter Phase Shifter Short Switching Time Test Diagram VDD = 4.8V S.G Z=50 Pin P.G f = 217Hz D.U.T Pout VAPC 1SS106 100p Oscillo Scope Vout 50% VAPC 95% 2p 2p 1SS106 2.2k Duty=1/8 50% Power Meter Pout tr tf 5% PF0147 Test Fixture Test Circuit Pin VAPC VDD Pout Z1 FB1 C2 + FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01F Ceramic chip C2 = 220F Aluminum electrolyte FB = Ferrite bead BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = 50 Micro strip line Printed Circuit Board Layout 41.87 5 16.26 5 41.87 30 2.88 5 5 6.5 22 5 100 Grass Epoxy Double sided P.C.B (t=1.6mm, r=4.8) 80 Unit: mm : Through hole (=1mm) 5 7 5 7 PF0147 Note for Use * At evaluation of a sample, take the drop of VDD voltage and power loss on test P.C.B. into account. * Apply control voltage range as VAPC = 0.5 to 3.5V, and GSM burst mode must be applied to all operation. For instance, pulse width = 0.577msec., duty = 12.5% and VAPC 0.5V, for all 4.616msec. frame except for 0.577msec. pulse. * Unevenness and distortion at the surface of PCB mounted module should be as small as possible. * To protect devices from electro-static damage, soldering iron, measuring equipment and human body, etc. should be grounded. * To avoid the degradation of efficiency and output power, lead pins should not be floated from copper foil of PCB, and connected to right position of RF signal line. (refer to figure 2) * Recommendation to improve the thermal resistance is shown below. -- Make through holes as many as possible under module. -- Use heat sink on the top case of module. * When the external components (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics of total system should be evaluated enough. * To avoid destruction of module caused by excess power consumption, voltage of APC should be limited less than 6V. * To get good stability, all GND pins should be soldered to ground pattern of PCB. * Don' t apply Full Heating Methods except Infrared Heating Methods. * In case of Partial Heating Methods, soldering temperature and time should be less than 230C, 10sec, per each GND pin. * Soldering temperature and time for I.R. Reflow should be the reflow profile shown in figure 2. * Recommended conditions for Rising Methods shows as follows. Solvents: de-ionized water, isopropyl alcohol, ethyl alcohol Rising condition: in case of soak rising 5 Min Max, in case of ultrasonic rising 5 Min Max * Don' t apply dipping solder method to mount. * Apply the way of washing after actual confirmation. * Recommended pattern of footprint is shown in figure 3. RF signal line Worse module Better module PCB All of lead pins should be connected just on the RF signal line. Figure 1 PF0147 (C) 230 Package Surface Temperature 1 to 4[C/s] Natural-cooling 160 140 60 to 90s 1[C/s] 4[C/s] Room temp. -4[C/s] 30s Max Pre-heating Soldering 230C Max -1[C/s] Package surface temperature (an example) Figure 2 Recommended Reflow Profile 3.1 14.2 3.1 5.1 5.1 3.5 Unit: mm Figure 3 Recommended Pattern of Footprint 4.0 1.6 1.5 1.5 1.5 1.5 8.2 0.4 PF0147 Characteristics Curve VAPC, T, VSWR (in) vs. Frequency 3 5 T 4 Apc Voltage VAPC (V) 2.5 V.S.W.R. (in) 40 Efficiency T (%) 3rd H.D (dB) 50 3 VAPC 2 VSWR 1 Pin = 10.4mW VDD = 4.8V Pout = 3.2W 30 2 20 1.5 10 1 0 870 885 900 Frequency f (MHz) 915 0 930 2nd H.D, 3rd H.D vs. Frequency -30 Pin = 10.4mW VDD = 4.8V Pout = 3.2W -40 -40 -30 2nd H.D (dB) -50 2nd H.D -50 -60 3rd H.D -60 -70 -70 -80 870 885 900 Frequency f (MHz) 915 -80 930 PF0147 Pout, T vs. VAPC (1) 5 f = 890MHz Pin = 10.4mW VDD = 4.8V T 40 Efficiency T (%) Efficiency T (%) 50 4 Output Power Pout (W) 3 Pout 2 30 20 1 10 0 1 1.5 2 2.5 3 Apc Voltage VAPC (V) 0 3.5 Pout, T vs. VAPC (2) 5 f = 915MHz Pin = 10.4mW VDD = 4.8V T 40 50 4 Output Power Pout (W) 3 Pout 2 30 20 1 10 0 1 1.5 2 2.5 3 Apc Voltage VAPC (V) 0 3.5 PF0147 2nd H.D, 3rd H.D, VSWR (in) vs. VAPC (1) 3 -20 -20 -30 2.5 2nd H.D (dBc) -40 2nd H.D VSWR -50 3rd H.D 1.5 -60 f = 890MHz Pin = 10.4mW VDD = 4.8V 1 1.5 2 2.5 3 -30 -40 2 -50 -60 1 -70 Apc Voltage VAPC (V) -70 3.5 2nd H.D, 3rd H.D, VSWR (in) vs. VAPC (2) 3 -20 -20 -30 2.5 2nd H.D (dBc) V.S.W.R. (in) 2nd H.D -40 VSWR -30 -40 2 -50 -50 1.5 -60 3rd H.D f = 915MHz Pin = 10.4mW VDD = 4.8V 1 1.5 2 2.5 3 -60 1 -70 Apc Voltage VAPC (V) -70 3.5 3rd H.D (dBc) 3rd H.D (dBc) V.S.W.R. (in) PF0147 Pout, T vs. Pin (1) 5 f = 890MHz VDD = 4.8V VAPC = 3.5V Pout 50 Efficiency T (%) Efficiency T (%) T 3 40 60 4 Output Power Pout (W) 2 30 1 20 0 5 6 7 8 9 10 11 12 13 14 Input Power Pin (mW) 10 15 Pout, T vs. Pin (2) 5 f = 915MHz VDD = 4.8V VAPC = 3.5V Pout 50 T 3 40 60 4 Output Power Pout (W) 2 30 1 20 0 5 6 7 8 9 10 11 12 13 14 Input Power Pin (mW) 10 15 PF0147 T, VAPC, VSWR (in) vs. Pin (1) 3 50 T 40 2.5 Efficiency T (%) V.S.W.R. (in) VAPC 30 VSWR 3 4 Apc Voltage VAPC (V) Apc Voltage VAPC (V) 5 2 20 2 1.5 10 f = 890MHz VDD = 4.8V Pout = 3.2W 5 6 7 8 9 10 11 12 13 14 1 1 0 Input Power Pin (mW) 0 15 T, VAPC, VSWR (in) vs. Pin (2) 3 50 T 40 2.5 Efficiency T (%) V.S.W.R. (in) 30 VAPC 20 2 3 4 5 2 1.5 10 f = 915MHz VDD = 4.8V Pout = 3.2W 5 6 7 8 9 VSWR 1 1 0 10 11 12 13 14 Apc Voltage VAPC (V) 0 15 PF0147 Package Dimensions Unit: mm 20 }0.3 (1.5) (17 ) (1.5) (1.7 ) 3.0MAX. (0.3) 12 }0.5 2.35 }0.5 (0.25) (4 - 3.0) 1 2 34 (1.8) (5.1) (5.1) (2.5) (2.5) (0.5) Hitachi code EIAJ code JEDEC code RF-H1 -- -- (7.5) |
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